ABB 3BHE009681R0101 3BHB01296R0001 5SHX2645L0002 IGCT Module

Description

These ABB modules are designed for high‑power switching and control in industrial automation, energy conversion, and heavy electrical systems. They combine advanced semiconductor technology with robust construction to ensure reliable operation in demanding environments.

Specifications

• 3BHE009681R0101 (IGCT Module):

  • Type: Integrated Gate Commutated Thyristor (IGCT)

  • Application: High‑power converters, drives, and grid systems

  • Function: Fast switching, low conduction losses, high reliability

• 3BHB01296R0001 (Thyristor Module):

  • Type: High‑power Thyristor semiconductor

  • Dimensions: 120 × 120 × 100 mm

  • Weight: 2.5 kg

• 5SHX2645L0002 (IGBT Module):

  • Type: High‑Power IGBT (Insulated Gate Bipolar Transistor)

  • Voltage Rating: 2600 V

  • Current Capacity: 4500 A

  • Features: Fast switching, low on‑voltage drop

  • Primary Use: Industrial drives, inverters, high‑power motor systems

Features

• High Voltage & Current Handling: All three modules are engineered for extreme electrical loads.

• Fast Switching Speeds: IGCT and IGBT modules provide efficient power conversion with minimal losses.

• Industrial Reliability: Built for continuous operation in heavy‑duty environments.

• Versatile Applications: Used in motor drives, renewable energy systems, and power converters.

• Legacy Lifecycle: Some modules (e.g., 3BHB01296R0001) are discontinued, requiring replacement mapping or spare stock sourcing.